Search results for " point defect"

Ge-doped silica nanoparticles: production and characterisation

2016

Silica nanoparticles were produced from germanosilicate glasses by KrF laser irradiation. The samples were investigated by cathodoluminescence and scanning electron microscopy, providing the presence of nanoparticles with size from tens up to hundreds of nanometers. The emission of the Germanium lone pair center is preserved in the nanoparticles and atomic force microscopy revealed the presence of no spherical particles with a size smaller than ~4 nm. The absorption coefficient enhancement induced by Ge doping is reputed fundamental to facilitate the nanoparticles production. This procedure can be applied to other co-doped silica materials to tune the nanoparticles features.

Structural modifications induced by electron irradiation in SiO2 glass: Local densification measurements

2009

We report a study on the structural modifications induced in amorphous silicon dioxide (a-SiO2) by electron irradiation in the dose range from 1.2?103 to 5?106?kGy. This study has been performed by investigating the properties of the 29Si hyperfine structure of the E '? center by electron paramagnetic resonance (EPR) spectroscopy. Our data suggest that the structural modifications induced by irradiation take place through the nucleation of confined high-defective and densified regions statistically dispersed into the whole volume of the material. In addition, we have estimated that in the high dose limit (D?105?kGy) the degree of densification associated to the local (within the defective r…

First Principles Calculations of Atomic and Electronic Structure of TiAl3+- and TiAl2+-Doped YAlO3

2021

In this paper, the density functional theory accompanied with linear combination of atomic orbitals (LCAO) method is applied to study the atomic and electronic structure of the Ti3+ and Ti2+ ions substituted for the host Al atom in orthorhombic Pbnm bulk YAlO3 crystals. The disordered crystalline structure of YAlO3 was modelled in a large supercell containing 160 atoms, allowing simulation of a substitutional dopant with a concentration of about 3%. In the case of the Ti2+-doped YAlO3, compensated F-center (oxygen vacancy with two trapped electrons) is inserted close to the Ti to make the unit cell neutral. Changes of the interatomic distances and angles between the chemical bonds in the de…

Etude spectroscopique de fibres durcies pour un environnement radiatif sévère

2013

Les nouveaux environnements radiatifs, comme LMJ, ITER, ILE/ELI, HiPER, réacteurs nucléaires des générations III+ et IV, nécessitent le développement de nouveaux composants pour le transport et le traitement des signaux. A cause de l’impossibilité d’utiliser les composants électroniques, la recherche est orientée vers les composants à fibres optiques comme vecteur d’information et aussi comme élément de diagnostic. Ils présentent de nombreux avantages, comme leur relative immunité électromagnétique, faible pois, large bande passante, mais les rayonnements gamma et les neutrons dégradent leur transmission. La dégradation dépend principalement de la composition de la fibre. Ainsi, il a été mo…

First Principles Calculations of Atomic and Electronic Structure of Ti3+Al- and Ti2+Al-Doped YAlO3

2021

M.G.B. appreciates support from the Chongqing Recruitment Program for 100 Overseas Innovative Talents (grant no. 2015013), the Program for the Foreign Experts (grant no. W2017011), Wenfeng High-end Talents Project (grant no. W2016-01) offered by the Chongqing University of Posts and Telecommunications (CQUPT), Estonian Research Council grant PUT PRG111, European Regional Development Fund (TK141), and NCN project 2018/31/B/ST4/00924. This study was supported by a grant from Latvian Research Council No. LZP-2018/1-0214 (for AIP). Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Program H202…

Inhomogeinity of Oxygen deficient centers in silica probed by nanosecond time-resolved luminescence measurements

2008

Temperature dependance of the generation and decay of E’ centers induced in silica by 4.7eV laser radiation

2009

We report a study of the generation of silicon dangling bonds (E' centers) induced in fused silica by 4.7 eV laser irradiation in the 10 200 K the induced defects undergo a post-irradiation decay due to their reaction with mobile H(2). The interplay between generation and annealing gives rise to a bell-shaped temperature dependence of the concentration of induced E' centers, peaking at 250 K

β-ray irradiation effects on silica nanoparticles

2015

By electron paramagnetic resonance (EPR) measurements, we examine the amplitude of the signal typically due to a combination of NBOHC (Non Bridging Hole Center) and POR (Peroxy Radical) defects induced by β-ray irradiation (from 1.2 to 1200 MGy) in silica nanoparticles with diameter ranging from 7 to 20 nm. Our data indicate that the signal line-shapes recorded at different doses is quite independent from the particles sizes and from the dose. Furthermore, for each considered nanoparticles size, the concentration of defects is also almost constant with respect to dose, and it does not change significantly if measured after 2 or 9 months from the irradiation. By contrast, we observed that th…

Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure

2021

This research was funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540) as well as by the Latvian research council via the Latvian National Research Program under the topic ?High-Energy Physics and Accelerator Technologies?, Agreement No: VPP-IZM-CERN-2020/1-0002 for A.I. Popov. In addition, J. Purans is grateful to the ERAF project 1.1.1.1/20/A/057 while A. Platonenko was supported by Latvian Research Council No. LZP-2018/1-0214. The authors thank A. Lushchik and M. Lushchik for many useful discussions. The research was (partly) performed in the Institute of Solid State Physics, University of Latvia ISSP UL. ISSP UL as…

Properties and generation by irradiation of germanium point defects in Ge-doped silica

2012

Ge doped amorphous silicon dioxide (Ge doped silica) has attracted the attention of researchers for more than 50 years. This material is used in many different technological fields from electronics, to telecommunication, to optics. In particular, it is widely used for the production of optical fibers and linear and nonlinear optical devices. The optical fibers, which allow to transmit optical signals with high speed avoiding interferences, are constituted by two regions with different refractive index values: core (inner part) and cladding (external part). To increase the refractive index of the core with respect to that of cladding, Ge doping of silica is commonly used. Moreover, in the Ge…